Abstract
The advancement of semiconductor technology has reached a critical juncture where progress depends on integrating understanding across multiple scales—from quantum mechanical effects that govern carrier behavior at atomic dimensions, to device physics that determines transistor performance, to material characterization that reveals hidden defects and transport mechanisms. This article develops a unified framework for semiconductor materials, devices, and systems by synthesizing insights from four interconnected domains: multiscale dynamics for predictive atomic modeling, nanoscale electronic architectures for future computing, quantum confinement effects in semiconductor nanostructures, and material characterization for charge transport understanding. Despite their apparent specialization, these domains share fundamental characteristics: they address phenomena that span multiple spatial and temporal scales; they require integrating theoretical models with experimental characterization; and they increasingly rely on computational methods, including artificial intelligence, to predict behavior and guide design. The article argues that progress in semiconductor technology depends on recognizing these interconnections and adopting integrated approaches that bridge quantum and continuum descriptions, theory and experiment, and materials and devices. It concludes by proposing a research agenda that emphasizes multiscale modeling, multi-modal characterization, and the integration of physics-based and data-driven methods.
Academians Publishers